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WG30N65HJ1 - IGBT

General Description

WG30N65HJ1 uses advanced Fine Trench Field-stop technology IGBT in TO3PF package to provide extremely low Vce(sat), and excellent switching performance.

This device offers Best-in-Class efficiency in hard switching and resonant topology.

2.

Key Features

  • Maximum junction temperature 175 °C.
  • Positive Temperature efficient for easy paralleling.
  • High switching speed.
  • EMI Improved Design 3.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WG30N65HJ1 IGBT Rev.01 - 04 March 2024 Product data sheet 1. General description WG30N65HJ1 uses advanced Fine Trench Field-stop technology IGBT in TO3PF package to provide extremely low Vce(sat), and excellent switching performance. This device offers Best-in-Class efficiency in hard switching and resonant topology. RoHS halogen-Free 2. Features and benefits • Maximum junction temperature 175 °C • Positive Temperature efficient for easy paralleling • High switching speed • EMI Improved Design 3. Applications • PFC • Solar converters • UPS • Welding Converters • Mid to high range switching frequency converters 4. Quick reference data Table 1.