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WS27C256L - Military 32K x 8 CMOS EPROM

General Description

The WS27C256L is a performance oriented 256K UV Erasable Electrically Programmable Read Only Memory organized as 32K words x 8 bits/word.

It is manufactured using an advanced CMOS technology which enables it to operate at speeds up to 120 nsecs.

Key Features

  • High Performance CMOS.
  • 120 ns Access Time.
  • Fast Programming.
  • DESC SMD No. 5962-86063.
  • Ceramic Leadless Chip Carrier (CLLCC).
  • EPI Processing.
  • Latch-Up Immunity to 200 mA.
  • ESD Protection Exceeds 2000 Volts.
  • 300 Mil DIP or Standard 600 Mil DIP.
  • JEDEC Standard Pin Configuration.

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Datasheet Details

Part number WS27C256L
Manufacturer WSI
File Size 48.36 KB
Description Military 32K x 8 CMOS EPROM
Datasheet download datasheet WS27C256L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WS27C256L Military 32K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS — 120 ns Access Time • Fast Programming • DESC SMD No. 5962-86063 • Ceramic Leadless Chip Carrier (CLLCC) • EPI Processing — Latch-Up Immunity to 200 mA — ESD Protection Exceeds 2000 Volts • 300 Mil DIP or Standard 600 Mil DIP • JEDEC Standard Pin Configuration GENERAL DESCRIPTION The WS27C256L is a performance oriented 256K UV Erasable Electrically Programmable Read Only Memory organized as 32K words x 8 bits/word. It is manufactured using an advanced CMOS technology which enables it to operate at speeds up to 120 nsecs. The memory was designed utilizing WSI's patented self-aligned split gate EPROM cell, resulting in a low power device with a very cost effective die size.