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MMBD4448V - Plastic-Encapsulate Diodes

Key Features

  • Batch process design, excellent power dissipation offers SWITC.
  • HLbIoeNwt tGeprrroDefviIlOeersDsueErlfeaackeamgoeucnutrerde natpapnl idc at ht ieornmianlorredsei sr ttaon c e . FEATURoEptSimize board space. z Fa.
  • stLoswwpitocwheinr glosssp, eheigdh efficiency.
  • High current capability, low forward voltage drop. z Hig.
  • hHicgohnsdurugcetacanpcaebility. z Pb.
  • -FGreuaerpdraincgkafogreoviseravvoaltialagbe lperotection. Ro.
  • HUSltprarohdiguhc-tsfpo.

📥 Download Datasheet

Datasheet Details

Part number MMBD4448V
Manufacturer WILLAS
File Size 405.04 KB
Description Plastic-Encapsulate Diodes
Datasheet download datasheet MMBD4448V Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
WILLAS FM120-M+ MMBD4448VTHRU SOT-563 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ SOD-123+ PACKAGE Pb Free Product Features • Batch process design, excellent power dissipation offers SWITC•HLbIoeNwt tGeprrroDefviIlOeersDsueErlfeaackeamgoeucnutrerde natpapnl idc at ht ieornmianlorredsei sr ttaon c e . FEATURoEptSimize board space. z Fa•stLoswwpitocwheinr glosssp, eheigdh efficiency. • High current capability, low forward voltage drop. z Hig• hHicgohnsdurugcetacanpcaebility. z Pb•-FGreuaerpdraincgkafogreoviseravvoaltialagbe lperotection. Ro•HUSltprarohdiguhc-tsfpoer epdacswkiintcghcinogd.e suffix ”G” • Silicon epitaxial planar chip, metal silicon junction.