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NPN Transistors Darlington Amplifier
* We declare that the material of product compliance with RoHS requirements.
P b Lead(Pb)-Free
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
V alue 40 40 12 500
Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol PD
RθJA PD
RθJA TJ , Tstg
Max Unit 225 mW
1.8 mW/°C 556 °C/W 300 mW
2.
MMBT6427 Datasheet
