Datasheet Details
| Part number | WMJ028N10HGS |
|---|---|
| Manufacturer | WAYON |
| File Size | 593.96 KB |
| Description | 100V N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 WMJ028N10HGS Datasheet
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General Description
WMJ028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
This device is well suited for high efficiency fast switching applications.
Key Features
- VDS= 100V, ID = 228A RDS(on) < 3mΩ @ VGS = 10V.
- High Speed Power Switching.
- Low Gate Charge.
- Low RDS(ON).
- 100% EAS Guaranteed.