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VM4002
General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
PPAK5X6 Pin Configuration
D
D D DD
D D DD
S SSG
G GS S S
S
40V N-Channel MOSFETs
BVDSS RDSON
ID
40V
13.8mΩ
40A
Features
40V,40A, RDS(ON) =13.