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VM2001 - 20V P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • -20V,-55A, RDS(ON) =8.3mΩ@VGS = -4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • Suit for -1.8V Gate Drive.

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Datasheet Details

Part number VM2001
Manufacturer Viva Electronics
File Size 501.63 KB
Description 20V P-Channel MOSFET
Datasheet download datasheet VM2001 Datasheet

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VM2001 20V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3X3 Pin Configuration D DD DD SG SS G S BVDSS -20V RDSON 8.3mΩ ID -55A Features  -20V,-55A, RDS(ON) =8.3mΩ@VGS = -4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for -1.