VT2045CBP
FEATURES
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
- TJ 200 °C max. in solar bypass mode application
- Material categorization: For definitions of pliance please see .vishay./doc?99912
TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 10 A TOP max. (AC mode) TJ max. (DC forward current) Package
2 x 10 A 45 V 160 A 0.41 V
150 °C 200 °C TO-220AB
Diode variation
Dual mon Cathode
MECHANICAL DATA
Case: TO-220AB Molding pound meets UL 94 V-0 flammability rating Base P/N-M3
- halogen-free, Ro HS-pliant, and mercial grade
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless...
