Datasheet4U Logo Datasheet4U.com

VSB3200S - High-Voltage Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation DO-204AC (DO-15).
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC.

📥 Download Datasheet

Datasheet Details

Part number VSB3200S
Manufacturer Vishay
File Size 145.30 KB
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VSB3200S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
VSB 1 POLE-16 A (HEAVY POWER CONTROL) VSB SERIES Fujitsu
VSB-100 1 POLE-16 A (HEAVY POWER CONTROL) VSB SERIES Fujitsu
VSB-100S 1 POLE-16 A (HEAVY POWER CONTROL) VSB SERIES Fujitsu
VSB-12 1 POLE-16 A (HEAVY POWER CONTROL) VSB SERIES Fujitsu
VSB-12S 1 POLE-16 A (HEAVY POWER CONTROL) VSB SERIES Fujitsu

Other Datasheets by Vishay

Part Number Description
VSB3200 High-Voltage Trench MOS Barrier Schottky Rectifier
VSB1545 Photovoltaic Solar Cell Protection Schottky Rectifier
VSB15L45 Photovoltaic Solar Cell Protection Schottky Rectifier
VSB2045 Photovoltaic Solar Cell Protection Schottky Rectifier
VSB20L45 Photovoltaic Solar Cell Protection Schottky Rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet.co.kr New Product VSB3200S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation DO-204AC (DO-15) • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 3.0 A TJ max. 3.0 A 200 V 50 A 0.
Published: |