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VS-STPS20L15GPbF - High Performance Schottky Rectifier

Description

The Schottky rectifier module has been optimized for ultralow forward voltage drop specifically for the OR-ing of parallel power supplies.

The proprietary barrier technology allows for reliable operation up to 125 °C junction temperature.

Features

  • Base cathode 2.
  • 125 °C TJ operation (VR < 5 V).
  • Center tap module.
  • Optimized for OR-ing.

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Full PDF Text Transcription

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VS-STPS20L15GPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 20 A FEATURES Base cathode 2 • 125 °C TJ operation (VR < 5 V) • Center tap module • Optimized for OR-ing applications • Ultralow forward voltage drop • High frequency operation TO-263AB (D2PAK) N/C 1 3 Anode • Guard ring for enhanced ruggedness and long term reliability • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance PRODUCT SUMMARY IF(AV) VR VF at IF IRM max. TJ max. EAS Package Diode variation 20 A 15 V 0.33 V 600 mA at 100 °C 125 °C 10 mJ TO-263AB (D2PAK) Single die • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.
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