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VS-ST330SPbF Series
Vishay Semiconductors
Phase Control Thyristors (Stud Version), 330 A
TO-118 (TO- 209AE)
PRIMARY CHARACTERISTICS
IT(AV) VDRM/VRRM
330 A
400 V, 800 V, 1200 V, 1400 V, 1600 V, 2000 V
VTM IGT TJ Package
1.52 V 200 mA -40 °C to +125 °C TO-118 (TO-209AE)
Circuit configuration
Single SCR
FEATURES • Center amplifying gate • International standard case TO-118 (TO-209AE) • Hermetic metal case with ceramic insulator • Compression bonded encapsulation for heavy
duty operations such as severe thermal cycling • Designed and qualified for industrial level • Material categorization: for definitions of compliance
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VS-ST330S08PbF Datasheet
