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VS-MBR2535CT-1-M3 - High Performance Schottky Rectifier

Download the VS-MBR2535CT-1-M3 datasheet PDF. This datasheet also covers the VS-MBRB2535CT-M3 variant, as both devices belong to the same high performance schottky rectifier family and are provided as variant models within a single manufacturer datasheet.

Description

This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature.

The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature.

Features

  • 150 °C TJ operation.
  • Center tap D2PAK (TO-263AB) and TO-262AA packages.
  • Low forward voltage drop.
  • High frequency operation.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • Guard ring for enhanced ruggedness and long term reliability.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • Designed and qualified according to JEDEC®-JESD 47.
  • Material ca.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VS-MBRB2535CT-M3-Vishay.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Vishay

Part Number Description
VS-MBR2535CT-1PbF Schottky Rectifier
VS-MBR2535CT-N3 Schottky Rectifier
VS-MBR2535CTPbF Schottky Rectifier
VS-MBR2545CT-1-M3 High Performance Schottky Rectifier
VS-MBR2545CT-1PbF Schottky Rectifier

Full PDF Text Transcription

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www.vishay.com VS-MBRB25..CT-M3, VS-MBR25..CT-M3 Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A 2 1 3 1 2 D2PAK (TO-263AB) 3 Base common cathode 2 TO-262AA Base common cathode 2 2 1 Common 3 Anode cathode Anode VS-MBRB25..CT-M3 2 1 Common 3 Anode cathode Anode VS-MBR25..CT-1-M3 PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IRM max. TJ max.
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