VS-MBR2045CT-M3 Datasheet PDF - Vishay High Performance Schottky Rectifier Specs

VS-MBR2045CT-M3 - High Performance Schottky Rectifier

This page provides the datasheet information for the VS-MBR2045CT-M3, a member of the VS-MBR2035CT-M3 High Performance Schottky Rectifier family.

Datasheet Summary

Description

This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature.

The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature.

Features

150 °C TJ operation.
Low forward voltage drop.
High frequency operation.
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
Guard ring for enhanced ruggedness and long term reliability.
Designed and qualified according to JEDEC®-JESD 47.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Datasheet Details

Part number	VS-MBR2045CT-M3
Manufacturer	Vishay
File Size	159.05 KB
Description	High Performance Schottky Rectifier
Datasheet	VS-MBR2045CT-M3 Datasheet
Additional preview pages of the VS-MBR2045CT-M3 datasheet.

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Full PDF Text Transcription

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www.vishay.com VS-MBR2035CT-M3, VS-MBR2045CT-M3 Vishay Semiconductors High Performance Schottky Rectifier, 2 x 10 A Base 2 common cathode 1 2 3 TO-220AB 3L Anode 2 Anode 1 Common 3 cathode PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IRM max. TJ max. EAS Package 2 x 10 A 35 V, 45 V 0.57 V 15 mA at 125 °C 150 °C 8 mJ TO-220AB 3L Circuit configuration Common cathode FEATURES • 150 °C TJ operation • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance please see www.vishay.

Published: Mar 13, 2024 |