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VS-MBR2035CT-M3 - High Performance Schottky Rectifier

Datasheet Summary

Description

This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature.

The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature.

Features

  • 150 °C TJ operation.
  • Low forward voltage drop.
  • High frequency operation.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • Guard ring for enhanced ruggedness and long term reliability.
  • Designed and qualified according to JEDEC®-JESD 47.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number VS-MBR2035CT-M3
Manufacturer Vishay
File Size 159.05 KB
Description High Performance Schottky Rectifier
Datasheet download datasheet VS-MBR2035CT-M3 Datasheet
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www.vishay.com VS-MBR2035CT-M3, VS-MBR2045CT-M3 Vishay Semiconductors High Performance Schottky Rectifier, 2 x 10 A Base 2 common cathode 1 2 3 TO-220AB 3L Anode 2 Anode 1 Common 3 cathode PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IRM max. TJ max. EAS Package 2 x 10 A 35 V, 45 V 0.57 V 15 mA at 125 °C 150 °C 8 mJ TO-220AB 3L Circuit configuration Common cathode FEATURES • 150 °C TJ operation • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance please see www.vishay.
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