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www.vishay.com
VS-HFA08TB60S-M3
Vishay Semiconductors
HEXFRED® Ultrafast Soft Recovery Diode, 8 A
2 1
3 D2PAK (TO-263AB)
Base cathode
2
1 N/C
3 Anode
PRIMARY CHARACTERISTICS
IF(AV) VR VF at IF trr (typ.) TJ max. Package
8A 600 V 1.4 V 18 ns 150 °C D2PAK (TO-263AB)
Circuit configuration
Single
FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr • Specified at operating conditions
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA08TB60S is a state of the art ultrafast recovery diode.