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VS-GB75TP120N
Vishay Semiconductors
Molding Type Module IGBT 2-in 1-Package, 1200 V, 75 A
INT-A-PAK
PRODUCT SUMMARY
VCES IC at TC = 80 °C VCE(on) (typical) at IC = 75 A, TJ = 25 °C
Package
Circuit
1200 V 75 A 1.90 V
INT-A-PAK Half bridge
FEATURES • High short circuit capability, self limiting to 6 x I • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper
Bonding) technology • Material categorization: For definitions of compliance
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