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VS-GB150TH120N - Molding Type Module IGBT

Description

Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness.

It is designed for applications such as general inverters and UPS.

Features

  • Low VCE(on) SPT + IGBT technology.
  • 10 μs short circuit capability.
  • VCE(on) with positive temperature coefficient.
  • Maximum junction temperature 150 °C.
  • Low inductance case.
  • Fast and soft reverse recovery antiparallel FWD.
  • Isolated copper baseplate using DCB (Direct Copper Bonding) technology.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription

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www.vishay.com VS-GB150TH120N Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 150 A Double INT-A-PAK PRODUCT SUMMARY VCES IC at TC = 80 °C VCE(on) (typical) at IC = 150 A, 25 °C Package Circuit 1200 V 150 A 1.9 V Double INT-A-PAK Half bridge FEATURES • Low VCE(on) SPT + IGBT technology • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology • Material categorization: for definitions of compliance please see www.vishay.
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