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VS-8TQ100S-M3 - High Performance Schottky Rectifier

Download the VS-8TQ100S-M3 datasheet PDF (VS-8TQ080S-M3 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for high performance schottky rectifier.

Description

The VS-8TQ Schottky rectifier series has been optimized for low reverse leakage at high temperature.

Features

  • 175 °C TJ operation.
  • Low forward voltage drop.
  • High frequency operation.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • Guard ring for enhanced ruggedness and long term reliability.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • Designed and qualified according to JEDEC®-JESD 47.
  • Material categorization: For definitions of compliance please see www. v.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VS-8TQ080S-M3-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VS-8TQ100S-M3
Manufacturer Vishay
File Size 153.45 KB
Description High Performance Schottky Rectifier
Datasheet download datasheet VS-8TQ100S-M3 Datasheet

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Full PDF Text Transcription

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www.vishay.com VS-8TQ080S-M3, VS-8TQ100S-M3 Vishay Semiconductors High Performance Schottky Rectifier, 8 A Base cathode 2 D2PAK 1 N/C 3 Anode PRODUCT SUMMARY IF(AV) VR VF at IF IRM TJ max. EAS Package Diode variation 8A 80 V, 100 V 0.58 V 7 mA at 125 °C 175 °C 7.5 mJ TO-263AB (D2PAK) Single die FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-8TQ...
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