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VS-80APS08-M3 - Rectifier Diode

Description

High voltage rectifiers optimized for very low forward voltage drop with moderate leakage.

These devices are intended for use in main rectification (single or three phase bridge).

Features

  • Very low forward voltage drop.
  • 150 °C max. operating junction temperature.
  • Glass passivated pellet chip junction.
  • Designed and qualified according to JEDEC®-JESD 47 Available.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription

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www.vishay.com VS-80APS..-M3 Series Vishay Semiconductors High Voltage, Input Rectifier Diode, 80 A 1 2 3 TO-247AC 3L Base cathode 2 1 Anode 3 Anode PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IFSM 80 A 800 V to 1200 V 1.17 V 1500 A TJ max. Package 150 °C TO-247AC 3L Circuit configuration Single FEATURES • Very low forward voltage drop • 150 °C max. operating junction temperature • Glass passivated pellet chip junction • Designed and qualified according to JEDEC®-JESD 47 Available • Material categorization: for definitions of compliance please see www.vishay.
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