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VS-6CUT04 - high performance Schottky diode

Features

  • 175 °C high performance Schottky diode.
  • Very low forward voltage drop.
  • Extremely low reverse leakage.
  • Optimized VF vs. IR trade off for high efficiency.
  • Increased ruggedness for reverse avalanche capability.
  • RBSOA available.
  • Negligible switching losses.
  • Submicron trench technology.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet Details

Part number VS-6CUT04
Manufacturer Vishay
File Size 134.76 KB
Description high performance Schottky diode
Datasheet download datasheet VS-6CUT04 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VS-6CUT04, VS-6CWT04FN Vishay Semiconductors High Performance Schottky Generation 5.0, 2 x 3 A I-PAK (TO-251AA) Base common cathode 4 D-PAK (TO-252AA) Base common cathode 4 13 Anode 2 Anode Common cathode VS-6CUT04 2 1 Common 3 Anode cathode Anode VS-6CWT04FN PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS D-PAK (TO-252AA), I-PAK (TO-251AA) 2x3A 45 V 0.54 V 3 mA at 125 °C 175 °C Common cathode 14 mJ FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs.
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