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VS-63CTQ100-N3 - Schottky Rectifier

Download the VS-63CTQ100-N3 datasheet PDF. This datasheet also covers the VS-63CTQ100PbF variant, as both devices belong to the same schottky rectifier family and are provided as variant models within a single manufacturer datasheet.

Description

This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature.

The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature.

Features

  • 175 °C TJ operation.
  • Low forward voltage drop.
  • High frequency operation.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • Guard ring for enhanced ruggedness and long term reliability.
  • Compliant to RoHS Directive 2002/95/EC.
  • Designed and qualified according to JEDEC-JESD47.
  • Halogen-free according to IEC 61249-2-21 definition (-N3 only).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VS-63CTQ100PbF-Vishay.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

Click to expand full text
www.vishay.com VS-63CTQ100PbF, VS-63CTQ100-N3 Vishay Semiconductors Schottky Rectifier, 2 x 30 A Base common cathode 2 TO-220AB Anode 2 Anode 1 Common 3 cathode PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS TO-220AB 2 x 30 A 100 V 0.69 V 20 mA at 125 °C 175 °C Common cathode 11.
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