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VS-40MT120UHAPbF - IGBT MTP

Features

  • Ultrafast non punch through (NPT) technology.
  • Positive VCE(on) temperature coefficient.
  • 10 μs short circuit capability.
  • Square RBSOA Available Available.

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Full PDF Text Transcription

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www.vishay.com VS-40MT120UHAPbF Vishay Semiconductors “Half Bridge” IGBT MTP (Ultrafast NPT IGBT), 80 A MTP PRIMARY CHARACTERISTICS VCES VCE(on) typical at VGE = 15 V IC at TC = 25 °C Speed 1200 V 3.36 V 80 A 8 kHz to 30 kHz Package MTP Circuit configuration Half bridge FEATURES • Ultrafast non punch through (NPT) technology • Positive VCE(on) temperature coefficient • 10 μs short circuit capability • Square RBSOA Available Available • HEXFRED® antiparallel diodes with ultrasoft reverse recovery and low VF • Al2O3 DBC • Very low stray inductance design for high speed operation • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.
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