VS-402CNQ200PBF Datasheet PDF (Gen 2 High Performance Schottky Rectifier)

VS-402CNQ200PBF - Gen 2 High Performance Schottky Rectifier

Description

/ APPLICATIONS The VS-402CNQ20OPBF not insulated modules integrate two state of the art Trench MOS barrier Schottky technology rectifiers in the compact industry standard TO244 package.

These devices are thus intended for high frequency converters and switching power supplies.

Features

Max. TJ = 175 °C.
Trench MOS Barrier Schottky technology.
Ultra low forward voltage drop.
Easy to use and parallel.
Optimized for power conversion: welding and industrial SMPS.

Datasheet Details

Part number	VS-402CNQ200PBF
Manufacturer	Vishay
File Size	123.90 KB
Description	Gen 2 High Performance Schottky Rectifier
Datasheet	VS-402CNQ200PBF Datasheet
Additional preview pages of the VS-402CNQ200PBF datasheet.

📁 Similar Datasheet

VS-48M - POWER RELAY (Fujitsu)

VS-48S - POWER RELAY (Fujitsu)

VS-100M - POWER RELAY (Fujitsu)

VS-100S - POWER RELAY (Fujitsu)

VS-12M - POWER RELAY (Fujitsu)

VS-12S - POWER RELAY (Fujitsu)

VS-14M - POWER RELAY (Fujitsu)

VS-14S - POWER RELAY (Fujitsu)

VS-18M - POWER RELAY (Fujitsu)

VS-18S - POWER RELAY (Fujitsu)

Full PDF Text Transcription

Click to expand full text

www.vishay.com VS-402CNQ200PBF Vishay Semiconductors Gen 2 High Performance Schottky Rectifier Not Insulated TO-244 Power Module 200 V, 400 A Lug terminal anode 1 Lug terminal anode 2 TO-244 Base common cathode PRIMARY CHARACTERISTICS IF(AV), module - TC = 128 °C VR Qrr (typical) trr Type 400 A 200 V 540 nC 132 ns Modules - diode, Schottky Package TO-244 Circuit configuration Two diodes common cathode FEATURES • Max. TJ = 175 °C • Trench MOS Barrier Schottky technology • Ultra low forward voltage drop • Easy to use and parallel • Optimized for power conversion: welding and industrial SMPS applications • Designed for industrial level • UL approved file E222165 • Material categorization: for definitions of compliance please see www.vishay.

Published: Sep 12, 2023 |