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VS-3C12ET07S2L-M3 - 650V Gen 3 Power SiC Merged PIN Schottky Diode

Datasheet Summary

Description

Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness.

Features

  • Majority carrier diode using Schottky technology on SiC wide band gap material.
  • Improved VF and efficiency by thin wafer technology.
  • Positive VF temperature coefficient for easy paralleling.
  • Virtually no recovery tail and no switching losses.
  • Temperature invariant switching behavior.
  • 175 °C maximum operating junction temperature.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • MPS structure for high ruggedness.

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Datasheet preview – VS-3C12ET07S2L-M3

Datasheet Details

Part number VS-3C12ET07S2L-M3
Manufacturer Vishay
File Size 182.41 KB
Description 650V Gen 3 Power SiC Merged PIN Schottky Diode
Datasheet download datasheet VS-3C12ET07S2L-M3 Datasheet
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Full PDF Text Transcription

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www.vishay.com VS-3C12ET07S2L-M3 Vishay Semiconductors 650 V Gen 3 Power SiC Merged PIN Schottky Diode, 12 A Base cathode 4 4 D2PAK 2L (TO-263AB 2L) 1 N/C 3 Anode LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models Application Notes PRIMARY CHARACTERISTICS IF(AV) VR VF at IF at 25 °C,typ. TJ max. IR at VR at 175 °C QC (VR = 400 V) Package 12 A 650 V 1.
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