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VS-3C02EJ07-M3 - 2A 650V Gen3 Power SiC Merged PIN Schottky Diode

Datasheet Summary

Description

/ APPLICATIONS Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness.

Optimized for extreme high-speed hard switching over a wide temperature range.

It is suited for demanding applications, such as bootstrap and anti-parallel diodes in AC/DC and DC/DC converters.

Features

  • Minimum creepage distance 3.2 mm guaranteed by design.
  • Comparative Tracking Index: CTI  600.
  • High CTI molding compound provides excellent electrical insulation at relevant working voltages.
  • Positive VF temperature coefficient for easy paralleling.
  • Virtually no recovery tail and no switching losses.
  • Temperature invariant switching behavior.
  • 175 °C maximum operating junction temperature.
  • Meets MSL level 1, per J-STD-020, LF.

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Datasheet preview – VS-3C02EJ07-M3

Datasheet Details

Part number VS-3C02EJ07-M3
Manufacturer Vishay
File Size 151.77 KB
Description 2A 650V Gen3 Power SiC Merged PIN Schottky Diode
Datasheet download datasheet VS-3C02EJ07-M3 Datasheet
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Full PDF Text Transcription

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www.vishay.com VS-3C02EJ07-M3 Vishay Semiconductors 650 V Gen 3 Power SiC Merged PIN Schottky Diode, 2 A eSMP® Series Top View Bottom View SlimSMA HV (DO-221AC) Cathode Anode LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS IF (2) VR VF at IF at 25 °C, typ. TJ max. IR at VR at 175 °C QC (VR = 800 V) Package 2A 650 V 1.30 V 175 °C 2.0 μA 7.2 nC SlimSMA HV (DO-221AC) Circuit configuration Single FEATURES • Minimum creepage distance 3.
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