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VS-30CTQ100S-M3 - High Performance Schottky Rectifier

Download the VS-30CTQ100S-M3 datasheet PDF. This datasheet also covers the VS-30CTQ080S-M3 variant, as both devices belong to the same high performance schottky rectifier family and are provided as variant models within a single manufacturer datasheet.

Description

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Features

  • 175 °C TJ operation.
  • Center tap configuration.
  • Low forward voltage drop.
  • High frequency operation.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • Guard ring for enhanced ruggedness and long term reliability.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • Designed and qualified according to JEDEC®-JESD 47.
  • Material categorization: For definit.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VS-30CTQ080S-M3-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VS-30CTQ100S-M3
Manufacturer Vishay
File Size 186.26 KB
Description High Performance Schottky Rectifier
Datasheet download datasheet VS-30CTQ100S-M3 Datasheet

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Other Datasheets by Vishay

Part Number Description
VS-30CTQ100SPbF High Performance Schottky Rectifier
VS-30CTQ100-1-M3 High Performance Schottky Rectifier
VS-30CTQ100-1PbF High Performance Schottky Rectifier
VS-30CTQ100-N3 Schottky Rectifier
VS-30CTQ100HN3 Schottky Rectifier

Full PDF Text Transcription

Click to expand full text
www.vishay.com VS-30CTQ...S-M3, VS-30CTQ...-1-M3 Series Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A D2PAK TO-262 Base common cathode 2 Base common cathode 2 2 1 Common 3 Anode cathode Anode VS-30CTQ...S-M3 2 1 Common 3 Anode cathode Anode VS-30CTQ...-1-M3 PRODUCT SUMMARY IF(AV) VR VF at IF IRM TJ max. EAS Package 2 x 15 A 80 V, 100 V 0.67 V 7.0 mA at 125 °C 175 °C 7.
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