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VS-20ATS08-M3 - Input Rectifier Diode

This page provides the datasheet information for the VS-20ATS08-M3, a member of the VS-20ETS08PbF Input Rectifier Diode family.

Description

High voltage rectifiers optimized for very low forward voltage drop with moderate leakage.

Features

  • Very low forward voltage drop.
  • 150 °C max. operating junction temperature.
  • Glass passivated pellet chip junction.
  • Designed and qualified according to JEDEC®-JESD 47.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet preview – VS-20ATS08-M3

Datasheet Details

Part number VS-20ATS08-M3
Manufacturer Vishay
File Size 222.24 KB
Description Input Rectifier Diode
Datasheet download datasheet VS-20ATS08-M3 Datasheet
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Full PDF Text Transcription

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VS-20ETS..PbF, VS-20ETS..-M3, VS-20ATS..PbF, VS-20ATS..-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 20 A 2 3 TO-220AC 1 Base cathode 2 1 23 TO-220AB Cathode to base 2 13 Cathode Anode VS-20ETS.. 1 Anode 3 Anode VS-20ATS.. PRODUCT SUMMARY Package IF(AV) VR VF at IF IFSM TJ max. Diode variation TO-220AC, TO-220AB 20 A 800 V to 1200 V 1.1 V 300 A 150 °C Single die, common anode FEATURES • Very low forward voltage drop • 150 °C max. operating junction temperature • Glass passivated pellet chip junction • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance please see www.vishay.
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