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VS-1N1199A - Medium Power Silicon Rectifier Diodes

Features

  • Voltage ratings from 50 V to 1000 V.
  • High surge capability.
  • Low thermal impedance.
  • High temperature rating.
  • Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912     MAJOR.

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Datasheet Details

Part number VS-1N1199A
Manufacturer Vishay
File Size 127.29 KB
Description Medium Power Silicon Rectifier Diodes
Datasheet download datasheet VS-1N1199A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VS-1N1...A, VS-1N36..A Series Vishay Semiconductors Medium Power Silicon Rectifier Diodes, (Stud Version), 12 A DO-4 (DO-203AA) PRIMARY CHARACTERISTICS IF(AV) Package 12 A DO-4 (DO-203AA) Circuit configuration Single FEATURES • Voltage ratings from 50 V to 1000 V • High surge capability • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260 • Material categorization: for definitions of compliance please see www.vishay.
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