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VS-112CNQ030APbF - High Performance Schottky Rectifier

Features

  • 150 °C TJ operation.
  • Center tap module Available.
  • Very low forward voltage drop Available.
  • High frequency operation.
  • High power discrete.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • Guard ring for enhanced ruggedness and long term reliability.
  • New fully transfer-mold low profile, small footprint, high current package.
  • Designed and qualif.

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Full PDF Text Transcription

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www.vishay.com VS-112CNQ030APbF Series Vishay Semiconductors High Performance Schottky Rectifier New Generation 3, D-61 Package, 2 x 55 A VS-112CNQ030APbF D-61-8 VS-112CNQ030ASMPbF Base common cathode 12 Anode Common 1 cathode 3 Anode 2 D-61-8-SM VS-112CNQ030ASLPbF 12 Anode Common 1 cathode 3 Anode 2 Base common cathode D-61-8-SL 1 Anode 1 3 Anode 2 PRODUCT SUMMARY Package D-61-8, D-61-8-SM, D-61-8-SL IF(AV) VR VF at IF IRM max. TJ max. Diode variation 2 x 55 A 30 V 0.
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