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VS-10UT10 - High Performance Generation 5.0 Schottky Rectifier

Features

  • 175 °C high performance Schottky diode.
  • Very low forward voltage drop.
  • Extremely low reverse leakage.
  • Optimized VF vs. IR trade off for high efficiency.
  • Increased ruggedness for reverse avalanche capability.
  • RBSOA available.
  • Negligible switching losses.
  • Submicron trench technology.
  • Compliant to RoHS Directive 2002/95/EC.
  • Designed and qualified according to JEDEC-JESD47.

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Datasheet Details

Part number VS-10UT10
Manufacturer Vishay
File Size 127.89 KB
Description High Performance Generation 5.0 Schottky Rectifier
Datasheet download datasheet VS-10UT10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VS-10UT10, VS-10WT10FN Vishay Semiconductors High Performance Generation 5.0 Schottky Rectifier, 10 A I-PAK (TO-251AA) Base cathode 4 D-PAK (TO-252AA) Base cathode 4 13 Anode 2 Anode Cathode VS-10UT10 2 1 Cathode 3 Anode Anode VS-10WT10FN PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS I-PAK (TO-251AA), D-PAK (TO-252AA) 10 A 100 V 0.66 V 4 mA at 125 °C 175 °C Single die 54 mJ FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs.
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