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VS-10ETF10S-M3, VS-10ETF12S-M3 Series
Vishay Semiconductors
Surface Mount Fast Soft Recovery Rectifier Diode, 10 A
2 1
3 D2PAK (TO-263AB)
Base cathode
+
2
1 Anode -
3 - Anode
PRIMARY CHARACTERISTICS
IF(AV) VR VF at IF IFSM trr TJ max. Snap factor Package
10 A 1000 V, 1200 V
1.33 V 155 A 80 ns 150 °C
0.6 D2PAK (TO-263AB)
Circuit configuration
Single
FEATURES • Glass passivated pellet chip junction • Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C • Designed and qualified according to
JEDEC®-JESD 47 • Material categorization: for definitions of compliance
please see www.vishay.
VS-10ETF10S-M3 Datasheet
