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VIT30L60C - Dual Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 2 VT30L60C PIN 1 PIN 3 PIN 2 CASE 3 1 VIT30L60C PIN 1 PIN 3 2 3 1.

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Datasheet Details

Part number VIT30L60C
Manufacturer Vishay
File Size 187.16 KB
Description Dual Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VIT30L60C Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr New Product VT30L60C, VIT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A TMBS ® TO-220AB K TO-262AA FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 2 VT30L60C PIN 1 PIN 3 PIN 2 CASE 3 1 VIT30L60C PIN 1 PIN 3 2 3 1 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. PIN 2 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. 2 x 15 A 60 V 200 A 0.
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