Datasheet4U Logo Datasheet4U.com

VI30120SG - High-Voltage Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 V30120SG PIN 1 PIN 2 CASE 3 1 VF30120SG PIN 1 PIN 2 2 3 1.
  • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package).
  • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPI.

📥 Download Datasheet

Datasheet Details

Part number VI30120SG
Manufacturer Vishay
File Size 212.05 KB
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VI30120SG Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
VI30120S High-Voltage Trench MOS Barrier Schottky Rectifier Vishay Siliconix
VI315-2 LCD varitronix
VI315-DP LCD varitronix
VI315-DPRC LCD ETC

Other Datasheets by Vishay

Part Number Description
VI30120S High-Voltage Trench MOS Barrier Schottky Rectifier
VI30120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VI30120C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
VI30100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VI30100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

Full PDF Text Transcription

Click to expand full text
www.DataSheet.co.kr New Product V30120SG, VF30120SG, VB30120SG, VI30120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
Published: |