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VI20100SG - High-Voltage Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Low thermal resistance.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
  • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package).
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number VI20100SG
Manufacturer Vishay
File Size 202.11 KB
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VI20100SG Datasheet

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Full PDF Text Transcription

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V20100SG, VF20100SG, VB20100SG, VI20100SG www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20100SG 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VF20100SG PIN 1 PIN 2 PIN 3 TO-262AA K A NC VB20100SG NC K A HEATSINK VI20100SG 3 2 1 PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 100 V IFSM 150 A VF at IF = 20 A 0.75 V TJ max.
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