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VFT1080S-E3 - Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
  • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number VFT1080S-E3
Manufacturer Vishay
File Size 144.43 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VFT1080S-E3 Datasheet

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Full PDF Text Transcription

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VT1080S-E3, VFT1080S-E3, VBT1080S-E3, VIT1080S-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TO-220AB TMBS ® ITO-220AB VT1080S 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VFT1080S PIN 1 PIN 2 PIN 3 TO-262AA K A NC VBT1080S NC K A HEATSINK VIT1080S 3 2 1 PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Package 10 A 80 V 100 A 0.
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