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VE2045C-E3
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.42 V at IF = 5 A
TMBS ®
TO-220AB
VE2045C
3 2 1
PIN 1 PIN 3
PIN 2 CASE
FEATURES • Power pack • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes, DC/DC converters, and polarity protection application.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 10 A (TA = 125 °C) TJ max. Package
2 x 10 A 45 V 100 A 0.
VE2045C-E3 Datasheet
