Datasheet4U Logo Datasheet4U.com

VBT2080S-E3 - Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
  • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Datasheet preview – VBT2080S-E3

Datasheet Details

Part number VBT2080S-E3
Manufacturer Vishay
File Size 197.32 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VBT2080S-E3 Datasheet
Additional preview pages of the VBT2080S-E3 datasheet.
Other Datasheets by Vishay

Full PDF Text Transcription

Click to expand full text
VT2080S-E3, VFT2080S-E3, VBT2080S-E3, VIT2080S-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A TO-220AB TMBS ® ITO-220AB VT2080S 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VFT2080S PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Material categorization: for definitions of compliance please see www.vishay.
Published: |