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V7N3M153 - Trench MOS Barrier Schottky Rectifier

Datasheet Summary

Features

  • Low profile package - typical height of 0.88 mm Available.
  • Leadless DFN package with side-wettable flanks suitable for customer AOI (Automatic Optical Inspection).
  • Very low voltage drop by TMBS Gen3 technology.
  • Low power losses, high efficiency.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3.
  • Material categorization: for definitions of compliance plea.

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Datasheet Details

Part number V7N3M153
Manufacturer Vishay
File Size 158.58 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V7N3M153 Datasheet
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    www.vishay.com V7N3M153 Vishay General Semiconductor Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier K 1 2 3 4 Anode (1) Anode (2) Anode (3) Anode (4) 4 3 2 1 DFN33A Cathode (K) LINKS TO ADDITIONAL RESOURCES FEATURES • Low profile package - typical height of 0.88 mm Available • Leadless DFN package with side-wettable flanks suitable for customer AOI (Automatic Optical Inspection) • Very low voltage drop by TMBS Gen3 technology • Low power losses, high efficiency • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.
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