Datasheet4U Logo Datasheet4U.com

V60D100CHM3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Download the V60D100CHM3 datasheet PDF. This datasheet also covers the V60D100C-M3 variant, as both devices belong to the same dual high-voltage trench mos barrier schottky rectifier family and are provided as variant models within a single manufacturer datasheet.

Features

  • Trench MOS Schottky technology.
  • Very low profile - typical height of 1.7 mm.
  • Ideal for automated placement.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (V60D100C-M3-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number V60D100CHM3
Manufacturer Vishay
File Size 106.72 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V60D100CHM3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
V600 RFID System Applications Omron
V600-HA Intelligent Flag I/II Omron
V600-HA Intelligent Flag I Omron
V600-HAM81 Intelligent Flag I/II Omron
V600-HAM81 Intelligent Flag I/II Omron

Other Datasheets by Vishay

Part Number Description
V60D100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V60D100C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V60D120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V60D45C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
V60D60C Trench MOS Barrier Schottky Rectifier

Full PDF Text Transcription

Click to expand full text
www.vishay.com V60D100C-M3, V60D100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V60D100C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM IFSM VF at IF = 30 A (TA = 125 °C) 100 V 320 A 0.66 V TJ max. 150 °C Package TO-263AC (SMPD) Diode variations Dual common cathode FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.
Published: |