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www.vishay.com
V4PAN50
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS® SMPATM
Top View
Bottom View
DO-221BC (SMPA)
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 4.0 A (TA = 125 °C) TJ max. Package
4.0 A 50 V 80 A 0.46 V 150 °C DO-221BC (SMPA)
Diode variation
Single die
FEATURES • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C • Material categorization: For definitions of compliance
please see www.vishay.
V4PAN50 Datasheet
