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V40DM120CHM3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Download the V40DM120CHM3 datasheet PDF. This datasheet also covers the V40DM120C-M3 variant, as both devices belong to the same dual high voltage trench mos barrier schottky rectifier family and are provided as variant models within a single manufacturer datasheet.

Features

  • Trench MOS Schottky technology.
  • Very low profile - typical height of 1.7 mm.
  • Ideal for automated placement.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (V40DM120C-M3-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number V40DM120CHM3
Manufacturer Vishay
File Size 119.15 KB
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V40DM120CHM3 Datasheet

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Other Datasheets by Vishay

Part Number Description
V40DM120C Trench MOS Barrier Schottky Rectifier
V40DM120C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
V40DM100C Trench MOS Barrier Schottky Rectifier
V40DM150C Trench MOS Barrier Schottky Rectifier
V40DM45C Trench MOS Barrier Schottky Rectifier

Full PDF Text Transcription

Click to expand full text
www.vishay.com V40DM120C-M3, V40DM120CHM3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V40DM120C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) 2 x 20 A VRRM 120 V IFSM VF at IF = 20 A (TA = 125 °C) TJ max. 250 A 0.64 V 150 °C Package TO-263AC (SMPD) Diode variations Common cathode FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.
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