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V30DL50CHM3 - Dual Trench MOS Barrier Schottky Rectifier

Download the V30DL50CHM3 datasheet PDF. This datasheet also covers the V30DL50C-M3 variant, as both devices belong to the same dual trench mos barrier schottky rectifier family and are provided as variant models within a single manufacturer datasheet.

Features

  • Trench MOS Schottky technology.
  • Very low profile - typical height of 1.7 mm.
  • Ideal for automated placement.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • AEC-Q101 qualified.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (V30DL50C-M3-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number V30DL50CHM3
Manufacturer Vishay
File Size 122.69 KB
Description Dual Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V30DL50CHM3 Datasheet

Full PDF Text Transcription

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www.vishay.com V30DL50C-M3, V30DL50CHM3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.29 V at IF = 5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V30DL50C PIN 1 K PIN 2 HEATSINK FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • AEC-Q101 qualified • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
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