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V30120CI - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number V30120CI
Manufacturer Vishay
File Size 130.26 KB
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V30120CI Datasheet

Full PDF Text Transcription

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www.vishay.com V30120CI Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 5 A TMBS ® TO-220AB PIN 1 PIN 3 3 2 1 PIN 2 CASE FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM IFSM 120 V 160 A VF at IF = 15 A (125 °C) 0.66 V TJ max.
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