• Part: V30100C-E3
  • Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 208.57 KB
Download V30100C-E3 Datasheet PDF
Vishay
V30100C-E3
FEATURES - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation - Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) - Low thermal resistance - Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) - Material categorization: for definitions of pliance please see .vishay./doc?99912 2 1 VB30100C PIN 1 PIN 2 HEATSINK ADDITIONAL RESOURCES 3D 3D 3D Models VI30100C PIN 1 3 2 1 PIN 2 PIN 3 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package 2 x 15 A 100 V 160 A 0.63 V 150 °C TO-220AB, ITO-220AB, D2PAK (TO-263AB), TO-262AA Circuit configuration mon cathode TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. MECHANICAL DATA Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB), and TO-262AA Molding pound...