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V20DM120CHM3 - Dual Trench MOS Barrier Schottky Rectifier

Download the V20DM120CHM3 datasheet PDF. This datasheet also covers the V20DM120C-M3 variant, as both devices belong to the same dual trench mos barrier schottky rectifier family and are provided as variant models within a single manufacturer datasheet.

Features

  • Trench MOS Schottky technology.
  • Very low profile - typical height of 1.7 mm.
  • Ideal for automated placement.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (V20DM120C-M3-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number V20DM120CHM3
Manufacturer Vishay
File Size 115.83 KB
Description Dual Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V20DM120CHM3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.vishay.com V20DM120C-M3, V20DM120CHM3 Vishay General Semiconductor Dual TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.55 V at IF = 5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View Anode 1 Anode 2 K Cathode DESIGN SUPPORT TOOLS AVAILABLE 3D 3D 3D Models FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.
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