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V20DL45-M3, V20DL45HM3
Vishay General Semiconductor
Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.31 V at IF = 5 A
TMBS® eSMP® Series TO-263AC (SMPD)
K
1 2 Top View
PIN 1 PIN 2
Bottom View
K HEATSINK
FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm
• Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified available - Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM
45 V
IFSM VF at IF = 20 A (TA = 125 °C)
TJ max.
160 A 0.
V20DL45-M3 Datasheet
