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V20200G - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Low thermal resistance.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
  • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
  • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC.

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Datasheet Details

Part number V20200G
Manufacturer Vishay
File Size 217.62 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V20200G Datasheet

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Full PDF Text Transcription

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www.DataSheet.co.kr New Product V20200G, VF20200G, VB20200G & VI20200G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
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