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V1PM12 - Surface Mount Trench MOS Barrier Schottky Rectifier

Features

  • Very low profile - typical height of 0.65 mm Available.
  • Ideal for automated placement.
  • Trench MOS Schottky technology.
  • Low forward voltage drop.
  • Low power loss, high efficiency.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number V1PM12
Manufacturer Vishay
File Size 102.80 KB
Description Surface Mount Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V1PM12 Datasheet

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Full PDF Text Transcription

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www.vishay.com V1PM12 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® eSMP® Series Top View Bottom View MicroSMP (DO-219AD) Anode Cathode DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 1.0 A 120 V 25 A VF at IF = 1.0 A (125 °C) 0.61 V TJ max. Package 175 °C MicroSMP (DO-219AD) Circuit configuration Single FEATURES • Very low profile - typical height of 0.
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