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V15P45HM3 - High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Download the V15P45HM3 datasheet PDF (V15P45-M3 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for high current density surface mount trench mos barrier schottky rectifier.

Features

  • Very low profile - typical height of 1.1 mm Available.
  • Ideal for automated placement.
  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TYPIC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (V15P45-M3-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number V15P45HM3
Manufacturer Vishay
File Size 92.10 KB
Description High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V15P45HM3 Datasheet
Other Datasheets by Vishay

Full PDF Text Transcription

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www.vishay.com V15P45-M3, V15P45HM3 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.31 V at IF = 5 A TMBS® eSMP® Series K 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 FEATURES • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.
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