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V12PM15 - Trench MOS Barrier Schottky Rectifier

Features

  • Very low profile - typical height of 1.1 mm Available.
  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number V12PM15
Manufacturer Vishay
File Size 90.45 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V12PM15 Datasheet

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Full PDF Text Transcription

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www.vishay.com V12PM15 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.60 V at IF = 6 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) 12.0 A VRRM 150 V IFSM VF at IF = 12.0 A (TA = 125 °C) 200 A 0.66 V TJ max. 175 °C Package SMPC (TO-277A) Circuit configuration Single FEATURES • Very low profile - typical height of 1.
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